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Phys. Rev. Lett. 92, 226404 (2004) [4 pages]

Anisotropic Metal-Insulator Transition in Epitaxial Thin Films

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I. B. Altfeder1,2, X. Liang2,3, T. Yamada4, D. M. Chen2, and V. Narayanamurti1
1Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
2The Rowland Institute at Harvard, Cambridge, Massachusetts 02142, USA
3Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, China
4NASA Ames Research Center, Moffett Field, California 94035, USA

Received 16 October 2003; published 3 June 2004

By comparing the properties of In and Pb quantum wells in a scanning tunneling microscopy subsurface imaging experiment, we found the existence of lateral bound states, a 2D Mott-Hubbard correlation gap, induced by transverse confinement. Its formation is attributed to spin or charge overscreening of quasi-2D excitations. The signature of the 2D confinement-deconfinement transition is also experimentally observed, with the correlation gap being pinned in the middle of the conduction band. A self-organized 2D Anderson lattice is suggested as a new ground state.

© 2004 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.92.226404
DOI:
10.1103/PhysRevLett.92.226404
PACS:
71.27.+a, 68.37.Ef, 71.30.+h, 73.22.–f