Phys. Rev. Lett. 92, 037201 (2004) [4 pages]Mn Interstitial Diffusion in (Ga,Mn)AsReceived 24 June 2003; published 20 January 2004 We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low-temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, in situ Auger spectroscopy, and resistivity measurements during annealing show that the observed changes are due to out diffusion of Mn interstitials towards the surface, governed by an energy barrier of 0.7–0.8 eV. Electric fields induced by Mn acceptors have a significant effect on the diffusion. © 2004 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.92.037201
DOI:
10.1103/PhysRevLett.92.037201
PACS:
75.70.Ak, 61.72.Cc, 71.15.Nc
See AlsoReply: K. W. Edmonds, P. Bogusławski, K. Y. Wang, R. P. Campion, S. V. Novikov, N. R. Farley, B. L. Gallagher, C. T. Foxon, M. Sawicki, T. Dietl, M. Buongiorno Nardelli, and J. Bernholc, Edmonds et al. Reply:, Phys. Rev. Lett. 94, 139702 (2005). Reply: M. Adell, J. Kanski, L. Ilver, J. Sadowski, V. Stanciu, and P. Svedlindh, Comment on “Mn Interstitial Diffusion in (Ga,Mn)As”, Phys. Rev. Lett. 94, 139701 (2005). |
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