Phys. Rev. Lett. 93, 117401 (2004) [4 pages]Photoinduced Structural Instability of the InP (110)-(1×1) SurfaceReceived 30 August 2003; published 10 September 2004 A scanning tunneling microscopy study reveals the removal of P and In atoms at intrinsic surface sites of InP (110)-(1×1) through an electronic mechanism under ns-laser excitation. Femtosecond nonresonant ionization spectroscopy detects desorption of P and In atoms associated directly with the bond rupture, and shows their translational energies characteristic of electronic bong breaking. The rate of P-atom removal is 4 times higher than that of In-atom removal, revealing a prominent species-dependent effect of structural instability under electronic excitation on semiconductor surfaces. © 2004 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.93.117401
DOI:
10.1103/PhysRevLett.93.117401
PACS:
78.66.Fd, 61.80.Ba, 68.35.Bs, 79.20.La
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