Phys. Rev. Lett. 93, 026802 (2004) [4 pages]

Thermal Stability and Electronic Structure of Atomically Uniform Pb Films on Si(111)

Abstract

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M. H. Upton^1,2, C. M. Wei^3,4, M. Y. Chou⁴, T. Miller^1,2, and T.-C. Chiang^1,2
¹Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana–Champaign, 104 S. Goodwin Avenue, Urbana, Illinois 61801-2902, USA
²Department of Physics, University of Illinois at Urbana–Champaign, 1110 W. Green Street, Urbana, Illinois 61801-3080, USA
³Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan 11529, Republic of China
⁴School of Physics, Georgia Institute of Technology, USA, Atlanta, Georgia 30332-0430, USA

Received 13 October 2003; published 7 July 2004

Atomically uniform Pb films are successfully prepared on Si(111), despite a large lattice mismatch. Angle-resolved photoemission measurements of the electronic structure show layer-resolved quantum well states which can be correlated with dramatic variations in thermal stability. The odd film thicknesses N=5, 7, and 9 monolayers show sharp quantum well states. The even film thicknesses N=6 and 8 do not, but are much more stable than the odd film thicknesses. This correlation is discussed in terms of a total energy calculation and Friedel-like oscillations in properties.

URL:

http://link.aps.org/doi/10.1103/PhysRevLett.93.026802

DOI:

10.1103/PhysRevLett.93.026802

PACS:

73.21.Fg, 68.55.Jk, 79.60.Dp

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Phys. Rev. Lett. 93, 026802 (2004) [4 pages]

Thermal Stability and Electronic Structure of Atomically Uniform Pb Films on Si(111)

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