Phys. Rev. Lett. 93, 266102 (2004) [4 pages]Imaging of all Dangling Bonds and their Potential on the Ge/Si(105) Surface by Noncontact Atomic Force MicroscopyReceived 10 September 2004; published 20 December 2004 High-resolution noncontact atomic force microscope (AFM) images were successfully taken on the Ge(105)-(1×2) structure formed on the Si(105) substrate and revealed all dangling bonds of the surface regardless of their electronic situation, surpassing scanning tunneling microscopy, whose images strongly deviated from the atomic structure by the electronic states involved. An atomically resolved electrostatic potential profile by a Kelvin-probe method with AFM shows potential variations among the dangling bond states, directly observing a charge transfer between them. These results clearly demonstrate that high-resolution noncontact AFM with a Kelvin-probe method is an ideal tool for analysis of atomic structures and electronic properties of surfaces. © 2004 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.93.266102
DOI:
10.1103/PhysRevLett.93.266102
PACS:
68.35.Bs, 68.37.Ps, 68.47.Fg, 73.20.–r
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