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Phys. Rev. Lett. 93, 266802 (2004) [4 pages]

Inelastic Electron Tunneling via Molecular Vibrations in Single-Molecule Transistors

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L. H. Yu1, Z. K. Keane1, J. W. Ciszek2, L. Cheng2, M. P. Stewart2, J. M. Tour2, and D. Natelson1,3
1Department of Physics and Astronomy, Rice University, 6100 Main Street, Houston, Texas 77005, USA
2Department of Chemistry and Center for Nanoscale Science and Technology, Rice University, 6100 Main Street, Houston, Texas 77005, USA
3Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, Texas 77005, USA

Received 2 August 2004; published 20 December 2004

In single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infrared spectroscopy. This is a form of inelastic electron tunneling spectroscopy of single molecules, with the transistor geometry allowing in situ tuning of the electronic states via a gate electrode. The vibrational features shift and change shape as the electronic levels are tuned near resonance, indicating significant modification of the vibrational states. When the molecule contains an unpaired electron, we also observe vibrational satellite features around the Kondo resonance.

© 2004 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.93.266802
DOI:
10.1103/PhysRevLett.93.266802
PACS:
73.23.Hk, 73.22.–f, 73.23.–b