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APS » Journals » Phys. Rev. Lett. » Volume 93 » Issue 3
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Phys. Rev. Lett. 93, 036603 (2004) [4 pages]

Quantum Interference Effects in the Magnetopiezoresistance of InAs/AlGaSb Quasi-One-Dimensional Electron Systems

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H. Yamaguchi and Y. Tokura
NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa 243-0198, Japan

S. Miyashia
NTT Advanced Technology, Atsugi-shi, Kanagawa 243-0198, Japan

Y. Hirayama
NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa 243-0198 and SORST-JST, Kawaguchi-shi, Saitama 331-0012, Japan

Received 19 December 2003; published 16 July 2004

See accompanying Physics Focus

We measured the low temperature magnetopiezoresistance of a quasi-one-dimensional electron system by fabricating an InAs/AlGaSb micromechanical cantilever. The magnetopiezoresistance curve showed aperiodic but reproducible oscillation, which was similar to the differential magnetoresistance curve obtained for the same device. A detailed comparison with model calculations strongly suggests that the quantum interference effects that cause the conductance fluctuations in the magnetoresistance are responsible for the peculiar behavior of the magnetopiezoresistance.

© 2004 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.93.036603
DOI:
10.1103/PhysRevLett.93.036603
PACS:
72.20.Fr, 72.80.Ey, 73.50.Dn, 73.63.Nm
 
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