Phys. Rev. Lett. 93, 036802 (2004) [4 pages]Counterflow Measurements in Strongly Correlated GaAs Hole Bilayers: Evidence for Electron-Hole PairingReceived 6 February 2004; published 12 July 2004 We study interacting GaAs bilayer hole systems, with very small interlayer tunneling, in a counterflow geometry where equal currents are passed in opposite directions in the two, independently contacted layers. At low temperatures, both the longitudinal and Hall counterflow resistances tend to vanish in the quantum Hall state at total bilayer filling ν=1, demonstrating the pairing of oppositely charged carriers in opposite layers. The counterflow Hall resistance decreases much more strongly than the longitudinal resistances as the temperature is reduced. © 2004 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.93.036802
DOI:
10.1103/PhysRevLett.93.036802
PACS:
73.50.–h, 71.70.Ej, 73.43.Qt
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