Phys. Rev. Lett. 93, 055901 (2004) [4 pages]Room Temperature Migration of Boron in Crystalline SiliconReceived 7 May 2004; published 30 July 2004 We demonstrate that substitutional B in silicon can migrate even at room temperature and below, stimulated by a high interstitial flux. Once mobile B is formed, it migrates for long distances with a diffusivity >5×10-13 cm2/s, until it assumes an immobile configuration with a migration length independent of the temperature. This phenomenon is present during secondary ion mass spectrometry (SIMS) analyses of B profiles, altering the profile during the analysis itself. These results shed new light on all the data based on SIMS analyses and reported in literature in the last decades. © 2004 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.93.055901
DOI:
10.1103/PhysRevLett.93.055901
PACS:
66.30.Jt, 68.49.Sf, 68.55.Ln
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