Phys. Rev. Lett. 94, 189601 (2005) [1 pages]

Comment on “Structural Analysis of the SiO₂/Si(100) Interface by Means of Photoelectron Diffraction”

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Angelo Bongiorno¹ and Alfredo Pasquarello^2,3
¹School of Physics Georgia Institute of Technology 837 State Street Atlanta, Georgia 30332-0430, USA
²Institute of Theoretical Physics Ecole Polytechnique Fédérale de Lausanne (EPFL) CH-1015 Lausanne, Switzerland
³Institut Romand de Recherche Numérique en Physique des Matériaux (IRRMA) CH-1015 Lausanne, Switzerland

Received 11 February 2005; published 12 May 2005

A Comment on the Letter by S. Dreiner, M. Schürmann, and C. Westphal Phys. Rev. Lett. 93 126101 (2004) The authors of the Letter offer a Reply.

URL:

http://link.aps.org/doi/10.1103/PhysRevLett.94.189601

DOI:

10.1103/PhysRevLett.94.189601

PACS:

68.35.Ct

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Phys. Rev. Lett. 94, 189601 (2005) [1 pages]

Comment on “Structural Analysis of the SiO₂/Si(100) Interface by Means of Photoelectron Diffraction”

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Comment on “Structural Analysis of the SiO₂/Si(100) Interface by Means of Photoelectron Diffraction”