Phys. Rev. Lett. 94, 236601 (2005) [4 pages]Imaging Spin Flows in Semiconductors Subject to Electric, Magnetic, and Strain FieldsReceived 18 November 2004; published 15 June 2005 Using scanning Kerr microscopy, we directly acquire two-dimensional images of spin-polarized electrons flowing laterally in bulk epilayers of n∶GaAs. Optical injection provides a local dc source of polarized electrons, whose subsequent drift and/or diffusion is controlled with electric, magnetic, and—in particular—strain fields. Spin precession induced by controlled uniaxial stress along the ⟨110⟩ axes demonstrates the direct k-linear spin-orbit coupling of electron spin to the shear (off diagonal) components of the strain tensor, ϵxy. © 2005 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.94.236601
DOI:
10.1103/PhysRevLett.94.236601
PACS:
72.25.Dc, 71.70.Ej, 85.75.−d
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