Phys. Rev. Lett. 94, 237201 (2005) [4 pages]Strain Induced Half-Metal to Semiconductor Transition in GdNSee Also: Erratum Received 2 March 2005; published 13 June 2005 We investigate the electronic structure and magnetic properties of GdN as a function of unit cell volume. Based on the first-principles calculations of GdN, we observe that there is a transformation in the conduction properties associated with the volume increase: first from half-metallic to semimetallic, then ultimately to semiconducting. We show that applying stress can alter the carrier concentration as well as mobility of the holes and electrons in the majority spin channel. In addition, we found that the exchange parameters depend strongly on lattice constant, thus the Curie temperature of this system can be enhanced by applying stress or doping impurities. © 2005 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.94.237201
DOI:
10.1103/PhysRevLett.94.237201
PACS:
75.10.-b, 71.27.+a, 71.70.Gm
See AlsoErratum: Chun-gang Duan, R. F. Sabiryanov, Jianjun Liu, W. N. Mei, P. A. Dowben, and J. R. Hardy, Erratum: Strain Induced Half-Metal to Semiconductor Transition in GdN [Phys. Rev. Lett. 94, 237201 (2005)], Phys. Rev. Lett. 96, 139901 (2006). |
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