Phys. Rev. Lett. 94, 056804 (2005) [4 pages]

Observation of the Giant Stark Effect in Boron-Nitride Nanotubes

Abstract

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Masa Ishigami^1,2, Jay Deep Sau^1,2, Shaul Aloni^1,2,3, Marvin L. Cohen^1,2, and A. Zettl^1,2,3,*
¹Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
²Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
³The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA

Received 10 September 2004; published 10 February 2005

Bias dependent scanning tunneling microscopy and scanning tunneling spectroscopy have been used to characterize the influence of transverse electric fields on the electronic properties of boron-nitride nanotubes (BNNTs). We find experimental evidence for the theoretically predicted giant Stark effect. The observed giant Stark effect significantly reduces the band gap of BNNTs and thus greatly enhances the utility of BNNTs for nanoscale electronic, electromechanical, and optoelectronic applications.

URL:

http://link.aps.org/doi/10.1103/PhysRevLett.94.056804

DOI:

10.1103/PhysRevLett.94.056804

PACS:

73.22.–f, 68.37.Ef

^*Electronic address: azettl@socrates.berkeley.edu

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Phys. Rev. Lett. 94, 056804 (2005) [4 pages]

Observation of the Giant Stark Effect in Boron-Nitride Nanotubes