Phys. Rev. Lett. 95, 016802 (2005) [4 pages]Magnetic-Field-Dependent Carrier Injection at La2/3Sr1/3MnO3/ and Organic Semiconductors InterfacesReceived 8 December 2004; published 1 July 2005 We have fabricated organic diodes utilizing several π-conjugated organic semiconductors (OSEC) as spacer layers between La2/3Sr1/3MnO3 (LSMO) and various metallic electrodes, and measured their magnetoresistance (MR) and magnetoelectroluminescence (MEL) responses. The devices exhibit large negative high-field MR responses that resemble the MR response of the LSMO electrode, but amplified by ∼3 orders in the resistance, and accompanied by a positive high-field MEL effect. These magnetic-field effects result from enhanced carrier injection at the LSMO-OSEC interface that is attributed to the anomalous field-dependent Fermi level shift in LSMO. © 2005 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.95.016802
DOI:
10.1103/PhysRevLett.95.016802
PACS:
73.43.Qt, 72.15.Gd, 72.20.My, 73.50.Jt
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