Phys. Rev. Lett. 95, 017201 (2005) [4 pages]High Temperature Ferromagnetism in GaAs-Based Heterostructures with Mn δ DopingSee Also: Erratum Received 25 October 2004; published 28 June 2005 We show that suitably designed magnetic semiconductor heterostructures consisting of Mn delta (δ)-doped GaAs and p-type AlGaAs layers, in which the locally high concentration of magnetic moments of Mn atoms are controllably overlapped with the two-dimensional hole gas wave function, realized remarkably high ferromagnetic transition temperatures (TC). A significant reduction of compensative Mn interstitials by varying the growth sequence of the structures followed by low-temperature annealing led to high TC up to 250 K. The heterostructure with high TC exhibited peculiar anomalous Hall effect behavior, whose sign depends on temperature. © 2005 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.95.017201
DOI:
10.1103/PhysRevLett.95.017201
PACS:
75.50.Pp, 71.55.Eq, 72.20.My, 72.25.Dc
See AlsoErratum: A. M. Nazmul, T. Amemiya, Y. Shuto, S. Sugahara, and M. Tanaka, Erratum: High Temperature Ferromagnetism in GaAs-Based Heterostructures with Mn δ Doping [Phys. Rev. Lett. 95, 017201 (2005)], Phys. Rev. Lett. 96, 149901 (2006). |
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