Phys. Rev. Lett. 95, 116806 (2005) [4 pages]

Coulomb Promotion of Spin-Dependent Tunneling

Abstract

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L. Y. Gorelik¹, S. I. Kulinich^1,2, R. I. Shekhter³, M. Jonson³, and V. M. Vinokur⁴
¹Department of Applied Physics, Chalmers University of Technology, SE-412 96 Göteborg, Sweden
²B. I. Verkin Institute for Low Temperature Physics and Engineering, 47 Lenin Avenue, 61103 Kharkov, Ukraine
³Department of Physics, Göteborg University, SE-412 96 Göteborg, Sweden
⁴Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 6043, USA

Received 7 March 2005; published 9 September 2005

We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) in the presence of an external magnetic field. Assuming the SET to have a nanometer size central island with a single-electron level we find that the interplay on the island between coherent spin-flip dynamics and Coulomb interactions can make the Coulomb correlations promote rather than suppress the current through the device. We find the criteria for this new phenomenon—Coulomb promotion of spin-dependent tunneling—to occur.

URL:

http://link.aps.org/doi/10.1103/PhysRevLett.95.116806

DOI:

10.1103/PhysRevLett.95.116806

PACS:

73.23.−b, 73.40.Gk

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Phys. Rev. Lett. 95, 116806 (2005) [4 pages]

Coulomb Promotion of Spin-Dependent Tunneling