Phys. Rev. Lett. 95, 187206 (2005) [4 pages]Nanomechanical Measurement of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)AsReceived 5 May 2005; published 28 October 2005 A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes. © 2005 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.95.187206
DOI:
10.1103/PhysRevLett.95.187206
PACS:
75.80.+q, 75.50.Pp, 75.70.−i, 85.85.+j
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