Phys. Rev. Lett. 95, 187405 (2005) [4 pages]Coherent Population Trapping of Electron Spins in a High-Purity n-Type GaAs SemiconductorReceived 31 March 2005; published 27 October 2005 In high-purity n-type GaAs under a strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor-bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence, indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various electromagnetically induced transparency type experiments. © 2005 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.95.187405
DOI:
10.1103/PhysRevLett.95.187405
PACS:
78.55.Cr, 42.50.Gy, 71.35.−y, 78.67.−n
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