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Phys. Rev. Lett. 95, 196404 (2005) [4 pages]

Orbital-Assisted Metal-Insulator Transition in VO2

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M. W. Haverkort1, Z. Hu1, A. Tanaka2, W. Reichelt3, S. V. Streltsov4, M. A. Korotin4, V. I. Anisimov4, H. H. Hsieh5, H.-J. Lin6, C. T. Chen6, D. I. Khomskii1, and L. H. Tjeng1
1II. Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, D-50937 Köln, Germany
2Department of Quantum Matter, ADSM, Hiroshima University, Higashi-Hiroshima 739-8530, Japan
3Institut für Anorganische Chemie, Technische Universität Dresden, Mommsenstrasse 13, D-01069 Dresden, Germany
4Institute of Metal Physics, S. Kovalevskoy 18, 620219 Ekaterinburg GSP-170, Russia
5Chung Cheng Institute of Technology, National Defense University, Taoyuan 335, Taiwan
6National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu 30077, Taiwan

Received 6 June 2005; published 2 November 2005

We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2,3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective bandwidths are reduced, that the system becomes more one dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime.

© 2005 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.95.196404
DOI:
10.1103/PhysRevLett.95.196404
PACS:
71.30.+h, 71.10.−w, 71.70.−d, 78.70.Dm