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Phys. Rev. Lett. 95, 256402 (2005) [4 pages]

Spatial Structure of Mn-Mn Acceptor Pairs in GaAs

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A. M. Yakunin1, A. Yu. Silov1, P. M. Koenraad1, J.-M. Tang2, M. E. Flatté2, W. Van Roy3, J. De Boeck3, and J. H. Wolter1
1COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O. Box 513, NL-5600MB Eindhoven, The Netherlands
2Optical Science and Technology Center and Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USA
3IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Received 23 May 2005; published 13 December 2005

The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wave function in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acceptor wave function to high doping levels suggests that ferromagnetism in GaMnAs is strongly influenced by impurity-band formation. The envelope-function and tight-binding models predict similarly anisotropic overlaps of the Mn wave functions for Mn-Mn pairs. This anisotropy implies differing Curie temperatures for Mn δ-doped layers grown on differently oriented substrates.

© 2005 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.95.256402
DOI:
10.1103/PhysRevLett.95.256402
PACS:
71.55.Eq, 73.20.−r, 75.30.Hx, 75.50.Pp