Phys. Rev. Lett. 95, 257402 (2005) [4 pages]Size-Dependent Fine-Structure Splitting in Self-Organized InAs/GaAs Quantum DotsReceived 15 July 2005; published 15 December 2005 A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 μeV with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band k·p theory and the configuration interaction method were performed. Different sources for the fine-structure splitting are discussed, and piezoelectricity is pinpointed as the only effect reproducing the observed trend. © 2005 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.95.257402
DOI:
10.1103/PhysRevLett.95.257402
PACS:
78.67.Hc, 71.70.Gm, 73.21.La, 78.60.Hk
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