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Phys. Rev. Lett. 95, 076806 (2005) [4 pages]

Multiple Cotunneling in Large Quantum Dot Arrays

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T. B. Tran1, I. S. Beloborodov2, X. M. Lin2,3, T. P. Bigioni1, V. M. Vinokur2, and H. M. Jaeger1
1James Franck Institute, University of Chicago, Chicago, Illinois 60637, USA
2Materials Science Divisions, Argonne National Laboratory, Argonne, Illinois 60439, USA
3Chemistry Divisions Argonne National Laboratory, Argonne, Illinois 60439, USA

Received 5 May 2005; published 12 August 2005

We investigate the effects of inelastic cotunneling on the electronic transport properties of gold nanoparticle multilayers and thick films at low applied bias, inside the Coulomb-blockade regime. We find that the zero-bias conductance, g0(T), in all systems exhibits Efros-Shklovskii-type variable range hopping transport. The resulting typical hopping distance, corresponding to the number of tunnel junctions participating in cotunneling events, is shown to be directly related to the power-law exponent in the measured current-voltage characteristics. We discuss the implications of these findings in light of models on cotunneling and hopping transport in mesoscopic, granular conductors.

© 2005 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.95.076806
DOI:
10.1103/PhysRevLett.95.076806
PACS:
73.23.Hk, 73.22.Lp, 71.30.+h