Phys. Rev. Lett. 95, 086607 (2005) [4 pages]

Polarity Switching and Transient Responses in Single Nanotube Nanofluidic Transistors

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Rong Fan¹, Min Yue², Rohit Karnik², Arun Majumdar^2,3, and Peidong Yang^1,3,*
¹Department of Chemistry, University of California, Berkeley, California 94720, USA
²Department of Mechanical Engineering, University of California, Berkeley, California 94720, USA
³Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

Received 1 May 2005; published 19 August 2005

See accompanying Physics Focus

We report the integration of inorganic nanotubes into metal-oxide-solution field effect transistors (FETs) which exhibit rapid field effect modulation of ionic conductance. Surface functionalization, analogous to doping in semiconductors, can switch the nanofluidic transistors from p-type to ambipolar and n-type field effect transistors. Transient study reveals the kinetics of field effect modulation is controlled by ion-exchange step. Nanofluidic FETs have potential implications in subfemtoliter analytical technology and large-scale nanofluidic integration.

URL:

http://link.aps.org/doi/10.1103/PhysRevLett.95.086607

DOI:

10.1103/PhysRevLett.95.086607

PACS:

85.30.Tv, 66.10.Ed, 82.65.+r

^*Electronic address: p_yang@berkeley.edu

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Phys. Rev. Lett. 95, 086607 (2005) [4 pages]

Polarity Switching and Transient Responses in Single Nanotube Nanofluidic Transistors