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Phys. Rev. Lett. 96, 017202 (2006) [4 pages]

Novel Orbital Ordering Induced by Anisotropic Stress in a Manganite Thin Film

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Y. Wakabayashi1, D. Bizen2, H. Nakao2, Y. Murakami2,3, M. Nakamura4,*, Y. Ogimoto5, K. Miyano6, and H. Sawa1
1Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba 305-0801, Japan
2Department of Physics, Tohoku University, Sendai 980-8578, Japan
3Synchrotron Radiation Research Center, JAERI, Sayo 679-5148, Japan
4Department of Applied Physics, University of Tokyo, Tokyo 113-8586, Japan
5Devices Technology Research Laboratories, SHARP Corporation, Nara 632-8567, Japan
6Research Center for Advanced Science and Technology, University of Tokyo, Tokyo 153-8904, Japan

Received 15 June 2005; published 4 January 2006

A novel structure of orbital ordering is found in a Nd0.5Sr0.5MnO3 thin film, which exhibits a clear first-order transition, by synchrotron x-ray diffraction measurements. Lattice parameters vary drastically at the metal-insulator transition at 170 K (=TMI), and superlattice reflections appear below 140 K (=TCO). The electronic structure between TMI and TCO is identified as A-type antiferromagnetic with a dx2-y2 ferro-orbital ordering. The new type of antiferro-orbital ordering characterized by the wave vector (1/41/41/2) in cubic notation emerges below TCO. The accommodation of the large lattice distortion at the first-order phase transition and the appearance of the novel orbital ordering are brought about by the anisotropy in the substrate, a new parameter for the phase control.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.96.017202
DOI:
10.1103/PhysRevLett.96.017202
PACS:
75.70.−i, 61.10.Nz, 75.47.Lx

*Present address: Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan.