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Phys. Rev. Lett. 96, 107003 (2006) [4 pages]

Doping Controlled Superconductor-Insulator Transition in Bi2Sr2-xLaxCaCu2O8+δ

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Seongshik Oh*, Trevis A. Crane, D. J. Van Harlingen, and J. N. Eckstein
Department of Physics, University of Illinois, Urbana, Illinois 61801, USA

Received 20 September 2005; published 14 March 2006

We show that the doping-controlled superconductor-insulator transition (SIT) in a high critical temperature cuprate system (Bi2Sr2-xLaxCaCu2O8+δ) exhibits a fundamentally different behavior than is expected from conventional SIT. At the critical doping, the sheet resistance seems to diverge in the zero-temperature limit. Above the critical doping, the transport is universally scaled by a two-component conductance model. Below, it continuously evolves from weakly to strongly insulating behavior. The two-component conductance model suggests that a collective electronic phase-separation mechanism may be responsible for this unconventional SIT behavior.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.96.107003
DOI:
10.1103/PhysRevLett.96.107003
PACS:
74.78.Bz, 71.30.+h, 74.25.Dw

*Email address: soh4@uiuc.edu

Present address: National Institute of Standards and Technology, Boulder, CO 80305, USA.