corner
corner

Phys. Rev. Lett. 96, 187601 (2006) [4 pages]

Nanosecond Domain Wall Dynamics in Ferroelectric Pb(Zr,Ti)O3 Thin Films

Download: PDF (543 kB) Buy this article Export: BibTeX or EndNote (RIS)

Alexei Grigoriev1, Dal-Hyun Do1, Dong Min Kim1, Chang-Beom Eom1, Bernhard Adams2, Eric M. Dufresne2, and Paul G. Evans1
1Department of Materials Science and Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706, USA
2Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA

Received 5 January 2006; published 8 May 2006

Domain wall motion during polarization switching in ferroelectric thin films is fundamentally important and poses challenges for both experiments and modeling. We have visualized the switching of a Pb(Zr,Ti)O3 capacitor using time-resolved x-ray microdiffraction. The structural signatures of switching include a reversal in the sign of the piezoelectric coefficient and a change in the intensity of x-ray reflections. The propagation of polarization domain walls is highly reproducible from cycle to cycle of the electric field. Domain wall velocities of 40  m s-1 are consistent with the results of other methods, but are far less than saturation values expected at high electric fields.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.96.187601
DOI:
10.1103/PhysRevLett.96.187601
PACS:
77.80.Fm, 68.37.Yz, 77.84.Dy, 78.47.+p