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Phys. Rev. Lett. 96, 196404 (2006) [4 pages]

Tunable Anomalous Hall Effect in a Nonferromagnetic System

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John Cumings1,2, L. S. Moore1, H. T. Chou3, K. C. Ku4, G. Xiang4, S. A. Crooker5, N. Samarth4, and D. Goldhaber-Gordon1,*
1Department of Physics, Stanford University, Stanford, California 94305, USA
2Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
3Department of Applied Physics, Stanford University, Stanford, California 94305, USA
4Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, USA
5National High Magnetic Field Laboratory, Los Alamos, New Mexico 87545, USA

Received 30 December 2005; published 17 May 2006

We measure the low-field Hall resistivity of a magnetically doped two-dimensional electron gas as a function of temperature and electrically gated carrier density. Comparing these results with the carrier density extracted from Shubnikov–de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew scattering of carriers by disorder near the crossover to localization.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.96.196404
DOI:
10.1103/PhysRevLett.96.196404
PACS:
75.50.Pp, 71.70.Ej, 85.30.Tv

*Corresponding author.

Electronic address: goldhaber-gordon@stanford.edu

 
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