Phys. Rev. Lett. 96, 037204 (2006) [4 pages]Linear Magnetization Dependence of the Intrinsic Anomalous Hall EffectReceived 21 October 2005; published 25 January 2006 The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn5Ge3. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long-wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and experiment is remarkably good, not only near 0 K but also at finite temperatures, up to about ∼240 K (0.8TC). © 2006 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.96.037204
DOI:
10.1103/PhysRevLett.96.037204
PACS:
75.47.−m, 71.15.−m, 75.30.−m
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