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Phys. Rev. Lett. 96, 066108 (2006) [4 pages]

Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation

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M. Schmidbauer1, Sh. Seydmohamadi2, D. Grigoriev3, Zh. M. Wang2, Yu. I. Mazur2, P. Schäfer3, M. Hanke4, R. Köhler3, and G. J. Salamo2
1Institut für Kristallzüchtung, D-12489 Berlin, Germany
2Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
3Institut für Physik, Humboldt-Universität zu Berlin, D-12489 Berlin, Germany
4Martin-Luther-Universität Halle-Wittenberg, D-06120 Halle/Saale, Germany

Received 26 August 2005; published 15 February 2006

Anisotropic surface diffusion and strain are used to explain the formation of three-dimensional (In,Ga)As quantum dot lattices. The diffusion characteristics of the surface, coupled with the elastic anisotropy of the matrix, provides an excellent opportunity to influence the dot positions. In particular, quantum dots that are laterally organized into long chains or chessboard two-dimensional arrays vertically organized with strict vertical ordering or vertical ordering that is inclined to the sample surface normal are accurately predicted and observed.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.96.066108
DOI:
10.1103/PhysRevLett.96.066108
PACS:
68.65.−k, 61.10.−i, 68.35.Fx, 81.15.Hi