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APS » Journals » Phys. Rev. Lett. » Volume 96 » Issue 8
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Phys. Rev. Lett. 96, 086803 (2006) [4 pages]

Full Counting Statistics for a Single-Electron Transistor: Nonequilibrium Effects at Intermediate Conductance

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Yasuhiro Utsumi1,2, Dmitri S. Golubev1,3,4, and Gerd Schön1,4
1Institut für Theoretische Festköperphysik, Universität Karlsruhe, 76128 Karlsruhe, Germany
2Condensed Matter Theory Laboratory, RIKEN, Wako, Saitama 351-0198, Japan
3I. E. Tamm Department of Theoretical Physics, P. N. Lebedev Physics Institute, 119991 Moscow, Russia
4Forschungszentrum Karlsruhe, Institut für Nanotechnologie, 76021 Karlsruhe, Germany

Received 19 August 2005; published 1 March 2006

We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation, we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.96.086803
DOI:
10.1103/PhysRevLett.96.086803
PACS:
73.23.Hk, 72.70.+m
 
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