Phys. Rev. Lett. 97, 106803 (2006) [4 pages]All-Electrical Control of Single Ion Spins in a SemiconductorSee Also: Publisher's Note Received 9 February 2006; published 5 September 2006; publisher error corrected 6 September 2006 We propose a method for all-electrical manipulation of single ion spins substituted into a semiconductor. Mn ions with a bound hole in GaAs form a natural example. Direct electrical manipulation of the ion spin is possible, because electric fields manipulate the orbital wave function of the hole, and through the spin-orbit coupling the spin is reoriented as well. Coupling ion spins can be achieved using gates to control the size of the hole wave function. Coherent manipulation of ionic spins may find applications in high-density storage and in scalable coherent or quantum information processing. © 2006 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.97.106803
DOI:
10.1103/PhysRevLett.97.106803
PACS:
73.20.−r, 03.67.Lx, 75.75.+a, 76.30.Da
See AlsoPublisher's Note: Jian-Ming Tang, Jeremy Levy, and Michael E. Flatté, Publisher’s Note: All-Electrical Control of Single Ion Spins in a Semiconductor [Phys. Rev. Lett. 97, 106803 (2006)], Phys. Rev. Lett. 97, 119903 (2006). |
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