Phys. Rev. Lett. 97, 136602 (2006) [4 pages]Optical Measurement and Control of Spin Diffusion in n-Doped GaAs Quantum WellsReceived 17 July 2006; published 26 September 2006 Transient spin gratings are used to study spin diffusion in lightly n-doped GaAs quantum wells at low temperatures. The spin grating is shown to form in the excess electrons from doping, providing spin relaxation and transport properties of the carriers most relevant to spintronic applications. We demonstrate that spin diffusion of the these carriers is accelerated by increasing the density or energy of the optically excited carriers. These results can be used to better understand and even control spin transport in experiments that optically excite spin-polarized carriers. © 2006 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.97.136602
DOI:
10.1103/PhysRevLett.97.136602
PACS:
72.25.Fe, 72.25.Dc, 75.40.Gb, 78.47.+p
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