Phys. Rev. Lett. 97, 136605 (2006) [4 pages]Effect of Strain on the Carrier Mobility in Heavily Doped p-Type SiReceived 20 March 2006; published 28 September 2006 We present an experiment that gives insight into the origin of the dependence of the hole mobility (μ) on the dopant species in heavily doped p-type Si under low electrical field. The Hall carrier concentration and mobility were measured in Si coimplanted with B and Ga in the 0.1–2×1020 cm-3 concentration range. The strain induced by substitutional dopants, detected by high resolution x-ray diffraction, was varied by changing the relative B and Ga concentration. The effect of strain on mobility was disentangled and a linear relationship between 1/μ and the perpendicular strain was found. © 2006 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.97.136605
DOI:
10.1103/PhysRevLett.97.136605
PACS:
72.80.Cw, 72.20.Fr, 81.15.Np, 85.40.Ry
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