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Phys. Rev. Lett. 97, 155701 (2006) [4 pages]

Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO2

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Q. Xu1,2, I. D. Sharp1,2, C. W. Yuan1,2, D. O. Yi3,2, C. Y. Liao1,2, A. M. Glaeser1,2, A. M. Minor4, J. W. Beeman2, M. C. Ridgway5, P. Kluth5, J. W. Ager, III2, D. C. Chrzan1,2, and E. E. Haller1,2
1Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
3Applied Science and Technology, University of California, Berkeley, California 94720, USA
4National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
5Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra ACT 0200, Australia

See Also: Publisher's Note

Received 4 May 2006; published 9 October 2006; corrected 7 November 2006

The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.97.155701
DOI:
10.1103/PhysRevLett.97.155701
PACS:
64.60.−i, 61.46.Hk, 64.70.Dv

See Also

Comment: Frédéric Caupin, Comment on “Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO2”, Phys. Rev. Lett. 99, 079601 (2007).

Publisher's Note: Q. Xu, I. D. Sharp, C. W. Yuan, D. O. Yi, C. Y. Liao, A. M. Glaeser, A. M. Minor, J. W. Beeman, M. C. Ridgway, P. Kluth, J. W. Ager, D. C. Chrzan, and E. E. Haller, Publisher’s Note: Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO2 [Phys. Rev. Lett. 97, 155701 (2006)], Phys. Rev. Lett. 97, 209902 (2006).

Reply: Q. Xu, I. D. Sharp, C. W. Yuan, D. O. Yi, C. Y. Liao, A. M. Glaeser, A. M. Minor, J. W. Beeman, M. C. Ridgway, P. Kluth, J. W. Ager, D. C. Chrzan, and E. E. Haller, Xu et al. Reply:, Phys. Rev. Lett. 99, 079602 (2007).

 
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