Phys. Rev. Lett. 97, 026602 (2006) [4 pages]Spin Injection and Detection in SiliconReceived 21 December 2004; revised 4 May 2006; published 14 July 2006 Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. Two ways to overcome this difficulty are proposed, both based on spin-polarized transport across a heterojunction. Using a realistic transport model incorporating the relevant spin dynamics of both electrons and holes, it is argued that symmetry properties of the charge current can be exploited to detect electrical spin injection in silicon using currently available techniques. © 2006 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.97.026602
DOI:
10.1103/PhysRevLett.97.026602
PACS:
72.25.Dc, 72.25.Mk
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