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Phys. Rev. Lett. 97, 206801 (2006) [4 pages]

Electron Transport via Local Polarons at Interface Atoms

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M. Berthe1, A. Urbieta1, L. Perdigão1, B. Grandidier1, D. Deresmes1, C. Delerue1, D. Stiévenard1, R. Rurali2, N. Lorente2,*, L. Magaud3, and P. Ordejón4
1Institut d’Electronique, de Microélectronique, et de Nanotechnologie, IEMN (CNRS, UMR 8520), Département ISEN, 41 bd Vauban, 59046 Lille Cédex, France
2LCAR (UMR 5589), Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse, Cédex France
3Laboratoire d’Etude des Propriétés Electroniques des Solides (LEPES-CNRS), BP 166, 38042 Grenoble Cédex 9, France
4Institut de Ciència de Materials de Barcelona CSIC, 08193, Barcelona, Spain

Received 17 March 2006; published 13 November 2006

Electronic transport is profoundly modified in the presence of strong electron-vibration coupling. We show that in certain situations, the electron flow takes place only when vibrations are excited. By controlling the segregation of boron in semiconducting Si(111)-√3×√3R30° surfaces, we create a type of adatom with a dangling-bond state that is electronically decoupled from any other electronic state. However, probing this state with scanning tunnelling microscopy at 5 K yields high currents. These findings are rationalized by ab-initio calculations that show the formation of a local polaron in the transport process.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.97.206801
DOI:
10.1103/PhysRevLett.97.206801
PACS:
73.43.Jn, 63.22.+m, 68.37.Ef, 73.63.−b

*Corresponding author: Electronic mail: lorente@irsamc.ups-tlse.fr