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Phys. Rev. Lett. 98, 106102 (2007) [4 pages]

Sculpting Semiconductor Heteroepitaxial Islands: From Dots to Rods

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J. T. Robinson1,2, D. A. Walko3, D. A. Arms3, D. S. Tinberg4, P. G. Evans4, Y. Cao1,2, J. A. Liddle2, A. Rastelli5, O. G. Schmidt5,6, and O. D. Dubon1,2
1Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
3Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
4Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706, USA
5Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
6Institute for Integrative Nanoscience, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany

Received 20 June 2006; published 7 March 2007

In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal species and substrate orientation. Analysis of island faceting elucidates the prominent role of the metal in promoting growth of preferred facet orientations while investigations of island composition and structure reveal the importance of Si-Ge intermixing in island evolution. These effects reflect a remarkable combination of metal-mediated growth phenomena that may be exploited to tailor the functionality of island arrays in heteroepitaxial systems.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.98.106102
DOI:
10.1103/PhysRevLett.98.106102
PACS:
81.07.−b, 81.15.Hi, 81.16.Dn
 
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