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Phys. Rev. Lett. 98, 125501 (2007) [4 pages]

Carrier-Density-Dependent Lattice Stability in InSb

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P. B. Hillyard et al.
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Received 22 October 2006; published 21 March 2007; corrected 2 April 2007

The ultrafast decay of the x-ray diffraction intensity following laser excitation of an InSb crystal has been utilized to observe carrier dependent changes in the potential energy surface. For the first time, an abrupt carrier dependent onset for potential energy surface softening and the appearance of accelerated atomic disordering for a very high average carrier density have been observed. Inertial dynamics dominate the early stages of crystal disordering for a wide range of carrier densities between the onset of crystal softening and the appearance of accelerated atomic disordering.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.98.125501
DOI:
10.1103/PhysRevLett.98.125501
PACS:
63.20.Kr, 61.10.−i, 64.70.Dv, 78.47.+p

See Also

Publisher's Note: P. B. Hillyard et al., Publisher’s Note: Carrier-Density-Dependent Lattice Stability in InSb [Phys. Rev. Lett. 98, 125501 (2007)], Phys. Rev. Lett. 98, 149906 (2007).