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APS » Journals » Phys. Rev. Lett. » Volume 98 » Issue 12
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Phys. Rev. Lett. 98, 126405 (2007) [4 pages]

Room-Temperature Polariton Lasing in Semiconductor Microcavities

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S. Christopoulos, G. Baldassarri Höger von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, and J. J. Baumberg*
School of Physics and Astronomy, University of Southampton, Highfield, Southampton, SO17 1BJ, United Kingdom

G. Christmann, R. Butté, E. Feltin, J.-F. Carlin, and N. Grandjean
École Polytechnique Fédérale de Lausanne (EPFL), Institute of Quantum Electronics and Photonics, 1015 Lausanne, Switzerland

Received 22 September 2006; published 21 March 2007

We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, corresponding to an absorbed energy density of 29  μJ cm-2, 1 order of magnitude smaller than the best optically pumped (In,Ga)N quantum-well surface-emitting lasers (VCSELs). Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of ±5° and spatial size around 5  μm.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.98.126405
DOI:
10.1103/PhysRevLett.98.126405
PACS:
71.36.+c, 03.75.Kk, 73.21.−b, 81.07.−b

*Electronic address: j.j.baumberg@soton.ac.uk

 
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