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Phys. Rev. Lett. 98, 166806 (2007) [4 pages]

Relaxation Time of a Chiral Quantum R-L Circuit

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J. Gabelli1, G. Fève1, T. Kontos1, J.-M. Berroir1, B. Placais1,*, D. C. Glattli1,2, B. Etienne3, Y. Jin3, and M. Büttiker4
1Laboratoire Pierre Aigrain, Département de Physique de l’Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France
2Service de Physique de l’Etat Condensé, CEA Saclay, F-91191 Gif-sur-Yvette, France
3Laboratoire de Photonique et Nanostructures, CNRS, route de Nozay, F-91460 Marcoussis, France
4Université de Genève, 24 Quai Ernest Ansermet, CH-1211 Genève, Switzerland

Received 26 January 2007; published 20 April 2007

We report on the GHz complex admittance of a chiral one-dimensional ballistic conductor formed by edge states in the quantum Hall regime. The circuit consists of a wide Hall bar (the inductor L) in series with a tunable resistor (R) formed by a quantum point contact. Electron interactions between edges are screened by a pair of side gates. Conductance steps are observed on both real and imaginary parts of the admittance. Remarkably, the phase of the admittance is transmission independent. This shows that the relaxation time of a chiral R   -L circuit is resistance independent. A current and charge conserving scattering theory is presented that accounts for this observation with a relaxation time given by the electronic transit time in the circuit.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.98.166806
DOI:
10.1103/PhysRevLett.98.166806
PACS:
73.23.Ad, 73.43.Cd, 73.43.Fj, 73.63.−b

*Electronic address: Bernard.Placais@lpa.ens.fr