Phys. Rev. Lett. 98, 036802 (2007) [4 pages]

Energy-Dependent Tunneling in a Quantum Dot

Abstract

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K. MacLean^1,*, S. Amasha¹, Iuliana P. Radu¹, D. M. Zumbühl^1,2, M. A. Kastner¹, M. P. Hanson³, and A. C. Gossard³
¹Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
²Department of Physics and Astronomy, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
³Materials Department, University of California, Santa Barbara, California 93106-5050, USA

Received 2 November 2006; published 16 January 2007

We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.

URL:

http://link.aps.org/doi/10.1103/PhysRevLett.98.036802

DOI:

10.1103/PhysRevLett.98.036802

PACS:

73.40.Gk, 73.23.Hk, 73.63.Kv

^*Electronic address: kmaclean@mit.edu

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Phys. Rev. Lett. 98, 036802 (2007) [4 pages]

Energy-Dependent Tunneling in a Quantum Dot