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Phys. Rev. Lett. 98, 045502 (2007) [4 pages]

Nondislocation Origin of GaAs Nanoindentation Pop-In Event

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D. Chrobak1,2, K. Nordlund3, and R. Nowak1,*
1Nordic Hysitron Laboratory, Helsinki University of Technology, 02015 HUT, Finland
2Institute of Materials Science, University of Silesia, 40-007 Katowice, Poland
3Accelerator Laboratory, University of Helsinki, P.O. Box 43, FIN-00014, Finland

Received 15 August 2006; published 23 January 2007

The present Letter demonstrates a pop-in event that is caused by a nanoindentation-induced phase transformation in GaAs, and not accompanied by any dislocation nucleation. Our computer simulations reveal the appearance of the new phase, documented by the structural correlation functions and visualization of the atomic positions. This challenges the orthodox view that the initial pop-in event reflects nucleation of dislocations or their movement, and has a bearing on materials where dislocation activity is not present.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.98.045502
DOI:
10.1103/PhysRevLett.98.045502
PACS:
62.25.+g, 61.50.Ks, 71.15.Pd, 81.07.Lk

*Electronic address: rnowak@cc.hut.fi