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APS » Journals » Phys. Rev. Lett. » Volume 98 » Issue 6
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Phys. Rev. Lett. 98, 067401 (2007) [4 pages]

Third and Fourth Optical Transitions in Semiconducting Carbon Nanotubes

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Paulo T. Araujo1, Stephen K. Doorn2, Svetlana Kilina3, Sergei Tretiak3, Erik Einarsson4, Shigeo Maruyama4, Helio Chacham1, Marcos A. Pimenta1, and Ado Jorio1
1Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG 30123-970, Brazil
2Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
3Theoretical Division and Center for Nonlinear Studies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
4Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan

Received 17 May 2006; published 8 February 2007

We have studied the optical transition energies of single-wall carbon nanotubes over broad diameter (0.7–2.3 nm) and energy (1.26–2.71 eV) ranges, using their radial breathing mode Raman spectra. We establish the diameter and chiral angle dependence of the poorly studied third and fourth optical transitions in semiconducting tubes. Comparative analysis between the higher lying transitions and the first and second transitions show two different diameter scalings. Quantum mechanical calculations explain the result showing strongly bound excitons in the first and second transitions and a delocalized electron wave function in the third transition.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.98.067401
DOI:
10.1103/PhysRevLett.98.067401
PACS:
78.67.Ch, 73.22.−f, 78.30.Na, 78.55.−m
 
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