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Phys. Rev. Lett. 99, 135501 (2007) [4 pages]

Direct Transformation of Vacancy Voids to Stacking Fault Tetrahedra

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B. P. Uberuaga1, R. G. Hoagland1, A. F. Voter2, and S. M. Valone1
1Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
2Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

Received 29 March 2007; published 26 September 2007

Defect accumulation is the principal factor leading to the swelling and embrittlement of materials during irradiation. It is commonly assumed that, once defect clusters nucleate, their structure remains essentially constant while they grow in size. Here, we describe a new mechanism, discovered during accelerated molecular dynamics simulations of vacancy clusters in fcc metals, that involves the direct transformation of a vacancy void to a stacking fault tetrahedron (SFT) through a series of 3D structures. This mechanism is in contrast with the collapse to a 2D Frank loop which then transforms to an SFT. The kinetics of this mechanism are characterized by an extremely large rate prefactor, tens of orders of magnitude larger than is typical of atomic processes in fcc metals.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.99.135501
DOI:
10.1103/PhysRevLett.99.135501
PACS:
61.72.Cc, 02.70.Ns, 61.72.Qq, 65.40.Gr