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Phys. Rev. Lett. 99, 157202 (2007) [4 pages]

Local Electronic Structure near Mn Acceptors in InAs: Surface-Induced Symmetry Breaking and Coupling to Host States

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F. Marczinowski1, J. Wiebe1,*, J.-M. Tang2,†, M. E. Flatté2, F. Meier1, M. Morgenstern3, and R. Wiesendanger1
1Institute of Applied Physics, Hamburg University, Jungiusstrasse 11, D-20355 Hamburg, Germany
2Optical Science and Technology Center and Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USA
3II. Institute of Physics B, RWTH Aachen University, Physikzentrum Melaten, Otto-Blumenthal-Strasse, D-52056 Aachen, Germany

Received 25 April 2007; published 9 October 2007

We present low-temperature scanning tunneling spectroscopy measurements on Mn acceptors in InAs in comparison with tight-binding calculations. We find a strong (001)-mirror asymmetry of the bound hole wave function close to the (110) surface. In addition, multiple acceptor-related peaks are observed and are attributed to a spin-orbit splitting of the acceptor level. Because of the p-d exchange interaction the local density of states near the acceptors is enhanced in the valence band and suppressed in the conduction band. We also observe signs of anisotropic scattering of the conduction band states by neutral acceptors.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevLett.99.157202
DOI:
10.1103/PhysRevLett.99.157202
PACS:
75.50.Pp, 72.10.Fk, 73.61.Ey, 75.30.Hx

*Corresponding author.

jwiebe@physnet.uni-hamburg.de

†Present address: Department of Physics, University of New Hampshire, Durham, NH 03824, USA.

‡http://www.nanoscience.de/group_r/

 
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