Phys. Rev. Lett. 99, 046404 (2007) [4 pages]Hidden Charge 2e Boson in Doped Mott InsulatorsReceived 5 December 2006; published 25 July 2007 We construct the low-energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a charge 2e bosonic field emerges at low energy. The charge 2e boson mediates dynamical spectral weight transfer across the Mott gap and creates a new charge e excitation by binding a hole. The result is a bifurcation of the electron dispersion below the chemical potential as observed recently in angle-resolved photoemission on Pb-doped Bi2Sr2CaCu2O8+δ (Pb2212). © 2007 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevLett.99.046404
DOI:
10.1103/PhysRevLett.99.046404
PACS:
71.27.+a
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