Fast ion surface energy loss and straggling in the surface wake fields
T. Nandi, K. Haris, Hala, Gurjeet Singh, Pankaj Kumar, Rajesh Kumar, S. K. Saini, S. A. Khan, Akhil Jhingan, P. Verma, A. Tauheed, D. Mehta, and H. G. Berry
Accepted
We present a dielectric charging model that combines ab initio calculations of trap levels with a continuum-level transport model and apply it to amorphous silicon nitride. Density functional theory calculations on an ensemble of structures predict a distribution of electron trap levels up to 1.8eV below the conduction band edge and provide insight into the physical trapping mechanisms. Incorporating this information in the continuum model, as opposed to the standard approach of a single adjustable trap level, not only leads to a more accurate description of experimental current transients in metal-insulator-metal capacitors but also to a more precise and physical determination of associated material properties.