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Map of the electrostatic potential caused by boron and phosphorous doping in a 0.35-micron silicon transistor, as determined by electron holography. The spatial resolution is 6 nanometers and the field of view is about 700 nanometers. |
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Map of the electrostatic potential caused by boron and phosphorous doping in a 0.35-micron silicon transistor, as determined by electron holography. The spatial resolution is 6 nanometers and the field of view is about 700 nanometers. |